- ECM+PV600 (0篇回复)
- Engineering the diffusion behavior of dopants (B, Sb) in (0篇回复)
- Engineering analysis of microdefect formation during (0篇回复)
- Energetics of oxygen species in crystalline and amorphous (0篇回复)
- Electronic levels of isolated and oxygen-perturbed hydrogen in (0篇回复)
- 多晶铸锭技术 (0篇回复)
- 铸锭工艺讲解 (0篇回复)
- Effects of surface steps on oxygen and boron deposited on Si(1 0 0) (0篇回复)
- E ffect of oxygen precipitation on voids in bulk silicon (0篇回复)
- E ffect of nitrogen doping on the minority carrier lifetime in (0篇回复)
- Effect of heat treatment on carbon in (0篇回复)
- Effect of fluorine on boron diffusion under interstitial (0篇回复)
- Effect of enhanced pressure during annealing on the creation of (0篇回复)
- Early stages of oxygen clustering in hydrogenated Cz-Si: (0篇回复)
- Do we know the energy levels ofradiation defects in silicon? (0篇回复)
- DLTS study of oxygen precipitates in silicon annealed (0篇回复)
- MCS450安全操作规范 (0篇回复)
- Determination of Silicon self-interstitial diffusivity using (0篇回复)
- Degradation of carrier lifetime in Cz silicon (0篇回复)
- Defect generation in crystalline silicon irradiated with high (0篇回复)
- Silicon detectors: Damage, modelling and expected long-time behaviour (0篇回复)
- Czochralski silicon characterization by using thermoelectric (0篇回复)
- Crystal-related defects evolution during thin epitaxial layer growth (0篇回复)
- Complexes of the self-interstitial with oxygen in irradiated (0篇回复)
- Pressure-induced formation of electrically active centres (0篇回复)
- Combination of optical measurement and precipitation theory to (0篇回复)
- Chemical and structural characterization of oxygen (0篇回复)
- Characterization of the oxygen distribution in Czochralski silicon (0篇回复)
- Characterization of defects in annealed Czochralski-grown (0篇回复)
- Characterization of crystallographic defects in thermally oxidized (0篇回复)
- Characterisation of oxygen and oxygen-related defects in highly- and (0篇回复)
- Boron–oxygen complexes in Si (0篇回复)
- Behaviour of oxygen in CZ-silicon during 430–630°C heat (0篇回复)
- Anomalous oxygen precipitation near the vacancy and (0篇回复)
- Annealing studies of point defects in low dose MeV ion (0篇回复)
- Annealing Annealing effect and impurity doping effects on the defect generation (0篇回复)
- Annealing behaviors of vacancy in varied neutron irradiated (0篇回复)
- Analysis of the oxygen impurity atoms beneath the surface (0篇回复)
- Analysis of extended defects in nitrogen annealed CZ silicon by (0篇回复)
- accurate infrared absorption measure (0篇回复)